Parameters | |
---|---|
Mounting Type | Surface Mount |
Gate to Source Voltage (Vgs) | 20V |
Package / Case | 3-SMD, Flat Lead |
Drain-source On Resistance-Max | 0.295Ohm |
Surface Mount | YES |
Drain to Source Breakdown Voltage | -30V |
Number of Pins | 3 |
Height | 850μm |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Length | 2mm |
Packaging | Tape & Reel (TR) |
Width | 1.6mm |
Published | 2013 |
JESD-609 Code | e6 |
Radiation Hardening | No |
Pbfree Code | yes |
RoHS Status | RoHS Compliant |
Part Status | Obsolete |
Lead Free | Lead Free |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 800mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 800mW |
Turn On Delay Time | 4 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 295m Ω @ 800mA, 10V |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 82pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 1.6A Tc |
Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 10V |
Rise Time | 3.3ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 5.4 ns |
Turn-Off Delay Time | 12 ns |
Lifecycle Status | LIFETIME (Last Updated: 2 days ago) |
Continuous Drain Current (ID) | 1.6A |