Parameters | |
---|---|
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 83m Ω @ 1.5A, 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 375pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V |
Rise Time | 26ns |
Factory Lead Time | 1 Week |
Drain to Source Voltage (Vdss) | 20V |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Package / Case | 3-SMD, Flat Lead |
Vgs (Max) | ±10V |
Number of Pins | 3 |
Fall Time (Typ) | 37 ns |
Weight | 124.596154mg |
Turn-Off Delay Time | 42 ns |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Continuous Drain Current (ID) | 3A |
Packaging | Tape & Reel (TR) |
Published | 2014 |
Gate to Source Voltage (Vgs) | 10V |
JESD-609 Code | e6 |
Pbfree Code | yes |
Drain Current-Max (Abs) (ID) | 3A |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
DS Breakdown Voltage-Min | 20V |
Number of Terminations | 3 |
RoHS Status | ROHS3 Compliant |
ECCN Code | EAR99 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Lead Free | Lead Free |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Reach Compliance Code | not_compliant |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 1W Ta |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 8.1 ns |
FET Type | P-Channel |