Parameters | |
---|---|
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Lead |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 800mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 800mW |
Turn On Delay Time | 4.8 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 198m Ω @ 1A, 4.5V |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 6V |
Current - Continuous Drain (Id) @ 25°C | 2A Ta |
Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V |
Rise Time | 11ns |
Drain to Source Voltage (Vdss) | 12V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±9V |
Fall Time (Typ) | 14 ns |
Turn-Off Delay Time | 23 ns |
Continuous Drain Current (ID) | 2A |
Gate to Source Voltage (Vgs) | 9V |
Drain Current-Max (Abs) (ID) | 2A |
Drain-source On Resistance-Max | 0.198Ohm |
Drain to Source Breakdown Voltage | -12V |
Height | 850μm |
Length | 2mm |
Width | 1.6mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |