Parameters | |
---|---|
Lifecycle Status | ACTIVE, NOT REC (Last Updated: 6 days ago) |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Lead |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TA |
Packaging | Tape & Reel (TR) |
Published | 2011 |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 1W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1W |
Turn On Delay Time | 9.9 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 69m Ω @ 1.5A, 2.5V |
Vgs(th) (Max) @ Id | 800mV @ 1mA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 6V |
Current - Continuous Drain (Id) @ 25°C | 3.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 2.5V |
Rise Time | 49ns |
Drive Voltage (Max Rds On,Min Rds On) | 0.9V 2.5V |
Vgs (Max) | ±5V |
Fall Time (Typ) | 65 ns |
Turn-Off Delay Time | 109 ns |
Continuous Drain Current (ID) | 3.5A |
Gate to Source Voltage (Vgs) | 5V |
Drain-source On Resistance-Max | 0.069Ohm |
Drain to Source Breakdown Voltage | 12V |
Height | 850μm |
Length | 2mm |
Width | 1.6mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |