Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Lead |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-F3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1W Ta |
Operating Mode | ENHANCEMENT MODE |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 69m Ω @ 1.5A, 2.5V |
Vgs(th) (Max) @ Id | 800mV @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 6V |
Current - Continuous Drain (Id) @ 25°C | 3.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 2.5V |
Drain to Source Voltage (Vdss) | 12V |
Drive Voltage (Max Rds On,Min Rds On) | 0.9V 2.5V |
Vgs (Max) | ±5V |
Continuous Drain Current (ID) | 3.5A |
Drain-source On Resistance-Max | 0.069Ohm |
DS Breakdown Voltage-Min | 12V |
RoHS Status | Non-RoHS Compliant |
Lead Free | Lead Free |