MCH3476-TL-H
| Parameters | |
|---|---|
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 800mW |
| Turn On Delay Time | 5.1 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 125m Ω @ 1A, 4.5V |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 128pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
| Rise Time | 11ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 14.5 ns |
| Continuous Drain Current (ID) | 2A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 2A |
| Drain-source On Resistance-Max | 0.125Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Height | 850μm |
| Length | 2mm |
| Width | 1.6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, Flat Lead |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 800mW Ta |
| Element Configuration | Single |
See Relate Datesheet
