Parameters | |
---|---|
Turn On Delay Time | 8.1 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 83m Ω @ 2A, 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 375pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V |
Rise Time | 31ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±10V |
Fall Time (Typ) | 39 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 4A |
Gate to Source Voltage (Vgs) | 10V |
Drain Current-Max (Abs) (ID) | 4A |
Drain-source On Resistance-Max | 0.083Ohm |
Drain to Source Breakdown Voltage | -20V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | LIFETIME (Last Updated: 5 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-SMD, Flat Leads |
Number of Pins | 6 |
Weight | 7.512624mg |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 1.5W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.5W |