Parameters | |
---|---|
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±10V |
Fall Time (Typ) | 60 ns |
Turn-Off Delay Time | 100 ns |
Continuous Drain Current (ID) | 4.5A |
Threshold Voltage | -1.3V |
Gate to Source Voltage (Vgs) | 10V |
Drain-source On Resistance-Max | 0.073Ohm |
Pulsed Drain Current-Max (IDM) | 18A |
DS Breakdown Voltage-Min | 30V |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-SMD, Flat Leads |
Number of Pins | 88 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2012 |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Additional Feature | ESD PROTECTED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Reach Compliance Code | not_compliant |
JESD-30 Code | R-XDSO-F6 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1.5W Ta |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 8.2 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 73m Ω @ 2A, 4.5V |
Vgs(th) (Max) @ Id | 1.3V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 4.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V |
Rise Time | 28ns |
Drain to Source Voltage (Vdss) | 30V |