MCP14E8-E/SN
| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 699mW |
| Voltage - Supply | 4.5V~18V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Number of Functions | 1 |
| Supply Voltage | 12V |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MCP14E8 |
| Pin Count | 8 |
| Number of Outputs | 2 |
| Output Voltage | 18V |
| Max Output Current | 2A |
| Nominal Supply Current | 1.8mA |
| Output Current | 2A |
| Max Supply Current | 1.8mA |
| Propagation Delay | 65 ns |
| Input Type | Inverting, Non-Inverting |
| Turn On Delay Time | 65 ns |
| Rise Time | 30ns |
| Fall Time (Typ) | 35 ns |
| Rise / Fall Time (Typ) | 12ns 15ns |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
| Channel Type | Independent |
| Input Bias Current | 10μA |
| Turn On Time | 0.035 μs |
| Input Current | 1μA |
| Output Peak Current Limit-Nom | 2A |
| Driven Configuration | Low-Side |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.8V 2.4V |
| Turn Off Time | 0.04 μs |
| Height | 1.4986mm |
| Length | 4.8768mm |
| Width | 3.9116mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Number of Pins | 8 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 2001 |
| JESD-609 Code | e3 |
| Part Status | Active |
MCP14E8-E/SN Overview
A higher level of flexibility is provided by its 8-SOIC (0.154, 3.90mm Width) package.A packaging method of Tube is indicated.Its recommended mounting way is Surface Mount.In the absence of a power supply voltage of 4.5V~18V V, it is able to demonstrate its superiority.Gate type IGBT, N-Channel, P-Channel MOSFET has been used in its design.For this device, the temperature range is -40°C~150°C TJ.Input type of Inverting, Non-Inverting is used.8 terminations constitute its foundation.You will find various related parts under the base part number MCP14E8.A total of 8 pins are available on the device.The device is specifically designed to operate at 12V volts.Mosfet driver employs an interface chip called HALF BRIDGE BASED MOSFET DRIVER as Mosfet drivers interface chip.There is a maximum output current of 2A that can be achieved.There are several useful electronic components within its subcategory MOSFET Drivers.The board has a total of 8 component pins.For its basis, there are 2 outputs integrated.An output current of 2A is supported.Its maximum power dissipation of 699mW shows its power loss capacity without overheating.In order to ensure greater stability, it is recommended to keep the supply current at 1.8mA.Mosfet gate drivers outputs 18V as voltage.
MCP14E8-E/SN Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
8 pins
Maximum power dissipation of 699mW
MCP14E8-E/SN Applications
There are a lot of Microchip Technology MCP14E8-E/SN gate drivers applications.
- Solar inverters
- High-voltage isolated DC-DC converters
- Motor controllers
- Telecom switch mode power supplies
- High-speed communications
- Industrial Motor Inverter - Power Tools, Robotics
- Refrigerator
- Digitally controlled power supplies
- LCD/LCoS/DLP portable and embedded pico projectors
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
