Parameters | |
---|---|
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | ISOWATT218FX |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Max Power Dissipation | 57W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | MD1803 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 57W |
Case Connection | ISOLATED |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 700V |
Max Collector Current | 10A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 5.5 @ 5A 5V |
Current - Collector Cutoff (Max) | 200μA |
Vce Saturation (Max) @ Ib, Ic | 2V @ 1.25A, 5A |
Collector Emitter Breakdown Voltage | 700V |
Emitter Base Voltage (VEBO) | 10V |
hFE Min | 5.5 |
Continuous Collector Current | 10A |
RoHS Status | ROHS3 Compliant |