Parameters | |
---|---|
Collector Emitter Saturation Voltage | 1.8V |
Collector Base Voltage (VCBO) | 9V |
Emitter Base Voltage (VEBO) | 9V |
hFE Min | 4.5 |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | ISOWATT218FX |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Max Power Dissipation | 58W |
Base Part Number | MD2001 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 58W |
Case Connection | ISOLATED |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 64 kHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 700V |
Max Collector Current | 12A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 4.5 @ 6A 5V |
Current - Collector Cutoff (Max) | 200μA |
Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1.5A, 6A |
Collector Emitter Breakdown Voltage | 700V |