Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | ISOWATT218FX |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | BUILT-IN BIAS RESISTORS |
Subcategory | Other Transistors |
Max Power Dissipation | 58W |
Base Part Number | MD2009 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 58W |
Case Connection | ISOLATED |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 700V |
Max Collector Current | 10A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 5.5A 5V |
Current - Collector Cutoff (Max) | 200μA |
Vce Saturation (Max) @ Ib, Ic | 2.8V @ 1.4A, 5.5A |
Collector Emitter Breakdown Voltage | 700V |
Emitter Base Voltage (VEBO) | 7V |
hFE Min | 5 |
Continuous Collector Current | 10A |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |