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MD2009DFX

MD2009DFX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-MD2009DFX
  • Package: ISOWATT218FX
  • Datasheet: PDF
  • Stock: 758
  • Description: MD2009DFX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOWATT218FX
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature BUILT-IN BIAS RESISTORS
Subcategory Other Transistors
Max Power Dissipation 58W
Base Part Number MD2009
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 58W
Case Connection ISOLATED
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 5.5A 5V
Current - Collector Cutoff (Max) 200μA
Vce Saturation (Max) @ Ib, Ic 2.8V @ 1.4A, 5.5A
Collector Emitter Breakdown Voltage 700V
Emitter Base Voltage (VEBO) 7V
hFE Min 5
Continuous Collector Current 10A
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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