MDI100-12A3
| Parameters | |
|---|---|
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 135A |
| Current - Collector Cutoff (Max) | 5mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 1.2kV |
| Input Capacitance | 5.5nF |
| Turn On Time | 150 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 75A |
| Turn Off Time-Nom (toff) | 700 ns |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 5.5nF @ 25V |
| VCEsat-Max | 3 V |
| Height | 30mm |
| Length | 94mm |
| Width | 34mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | Y4-M5 |
| Number of Pins | 7 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Bulk |
| Published | 2000 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Additional Feature | UL RECOGNIZED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 560W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Base Part Number | MDI |
| JESD-30 Code | R-XUFM-X5 |
| Number of Elements | 1 |
| Configuration | Single |
| Case Connection | ISOLATED |
| Power - Max | 560W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
See Relate Datesheet
