Parameters | |
---|---|
Power Dissipation-Max (Abs) | 735W |
Turn On Time | 160 ns |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 100A |
Turn Off Time-Nom (toff) | 690 ns |
IGBT Type | NPT |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 6.5nF @ 25V |
VCEsat-Max | 3 V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Chassis Mount |
Package / Case | Y4-M5 |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Published | 2000 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Additional Feature | UL RECOGNIZED |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Base Part Number | MDI |
Pin Count | 7 |
JESD-30 Code | R-XUFM-X5 |
Number of Elements | 1 |
Configuration | Single |
Case Connection | ISOLATED |
Power - Max | 700W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Current - Collector Cutoff (Max) | 6mA |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 160A |