MDI400-12E4
| Parameters | |
|---|---|
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | Y3-Li |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Bulk |
| Published | 2009 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 1.7kW |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Base Part Number | MDI |
| Pin Count | 5 |
| JESD-30 Code | R-XUFM-X5 |
| Number of Elements | 1 |
| Configuration | Single |
| Case Connection | ISOLATED |
| Power - Max | 1700W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.8V |
| Max Collector Current | 420A |
| Current - Collector Cutoff (Max) | 3.3mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 17nF |
| Turn On Time | 230 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 300A |
| Turn Off Time-Nom (toff) | 730 ns |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 17nF @ 25V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
