Parameters | |
---|---|
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | TIN LEAD |
Subcategory | Other Transistors |
Max Power Dissipation | 120W |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 2 |
JESD-30 Code | R-CDFM-F2 |
Number of Elements | 1 |
Configuration | SINGLE |
Power Dissipation | 120W |
Case Connection | BASE |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 65V |
Max Collector Current | 4A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA 5V |
Collector Emitter Breakdown Voltage | 65V |
Gain | 10dB |
Frequency - Transition | 1.03GHz~1.09GHz |
Collector Base Voltage (VCBO) | 65V |
Emitter Base Voltage (VEBO) | 3.5V |
Highest Frequency Band | L B |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | 55AW |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 200°C TJ |
Packaging | Bulk |
Published | 2015 |
JESD-609 Code | e0 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |