banner_page

MDS60L

Trans GP BJT 65V 4A 3-Pin Case 55AW


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-MDS60L
  • Package: 55AW
  • Datasheet: -
  • Stock: 452
  • Description: Trans GP BJT 65V 4A 3-Pin Case 55AW (Kg)

Details

Tags

Parameters
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory Other Transistors
Max Power Dissipation 120W
Terminal Position DUAL
Terminal Form FLAT
Pin Count 2
JESD-30 Code R-CDFM-F2
Number of Elements 1
Configuration SINGLE
Power Dissipation 120W
Case Connection BASE
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V
Collector Emitter Breakdown Voltage 65V
Gain 10dB
Frequency - Transition 1.03GHz~1.09GHz
Collector Base Voltage (VCBO) 65V
Emitter Base Voltage (VEBO) 3.5V
Highest Frequency Band L B
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55AW
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 200°C TJ
Packaging Bulk
Published 2015
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good