Parameters | |
---|---|
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Module |
Transistor Element Material | SILICON |
Operating Temperature | -20°C~150°C TJ |
Published | 2005 |
Series | IGBTMOD™ |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 11 |
Max Power Dissipation | 2.9kW |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Pin Count | 11 |
JESD-30 Code | R-XUFM-X11 |
Number of Elements | 2 |
Configuration | Half Bridge |
Case Connection | ISOLATED |
Power - Max | 2900W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 3V |
Max Collector Current | 800A |
Current - Collector Cutoff (Max) | 1mA |
Collector Emitter Breakdown Voltage | 600V |
Input Capacitance | 93nF |
Turn On Time | 550 ns |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 800A |
Turn Off Time-Nom (toff) | 1050 ns |
NTC Thermistor | No |
Input Capacitance (Cies) @ Vce | 93nF @ 10V |
RoHS Status | RoHS Compliant |