MGD623N
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3 Full Pack |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2012 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Max Power Dissipation | 150W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 2 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Input Type | Standard |
| Power - Max | 150W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.3V |
| Max Collector Current | 50A |
| Reverse Recovery Time | 300 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 175 ns |
| Test Condition | 300V, 50A, 39 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 50A |
| Turn Off Time-Nom (toff) | 500 ns |
| Current - Collector Pulsed (Icm) | 100A |
| Td (on/off) @ 25°C | 75ns/300ns |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
