Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Bulk |
Published | 2005 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Additional Feature | VOLTAGE CLAMPING |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 410V |
Max Power Dissipation | 150W |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | 15A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 150W |
Case Connection | COLLECTOR |
Input Type | Logic |
Transistor Application | AUTOMOTIVE IGNITION |
Rise Time | 4.5ns |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 440V |
Max Collector Current | 15A |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 440V |
Collector Emitter Saturation Voltage | 10V |
Turn On Time | 6000 ns |
Test Condition | 300V, 6.5A, 1k Ω |
Vce(on) (Max) @ Vge, Ic | 2.9V @ 4V, 25A |
Turn Off Time-Nom (toff) | 20500 ns |
Current - Collector Pulsed (Icm) | 50A |
Td (on/off) @ 25°C | -/4μs |
Gate-Emitter Voltage-Max | 22V |
Gate-Emitter Thr Voltage-Max | 2.1V |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |