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MID300-12A4

Trans IGBT Module N-CH 1.2KV 330A 5-Pin Y3-DCB


  • Manufacturer: IXYS
  • Nocochips NO: 401-MID300-12A4
  • Package: Y3-DCB
  • Datasheet: PDF
  • Stock: 222
  • Description: Trans IGBT Module N-CH 1.2KV 330A 5-Pin Y3-DCB (Kg)

Details

Tags

Parameters
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.2kV
Input Capacitance 13nF
Turn On Time 160 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 200A
Turn Off Time-Nom (toff) 690 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 13nF @ 25V
VCEsat-Max 2.7 V
Height 30mm
Length 110mm
Width 62mm
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case Y3-DCB
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.38kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MID
Pin Count 7
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 1380W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 330A
Current - Collector Cutoff (Max) 13mA
See Relate Datesheet

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