Parameters | |
---|---|
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 1.2kV |
Input Capacitance | 13nF |
Turn On Time | 160 ns |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 200A |
Turn Off Time-Nom (toff) | 690 ns |
IGBT Type | NPT |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 13nF @ 25V |
VCEsat-Max | 2.7 V |
Height | 30mm |
Length | 110mm |
Width | 62mm |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | Y3-DCB |
Number of Pins | 5 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Bulk |
Published | 2009 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
Additional Feature | UL RECOGNIZED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 1.38kW |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Base Part Number | MID |
Pin Count | 7 |
Number of Elements | 1 |
Configuration | Single |
Case Connection | ISOLATED |
Power - Max | 1380W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 330A |
Current - Collector Cutoff (Max) | 13mA |