MIEB101H1200EH
| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | E3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~125°C TJ |
| Packaging | Bulk |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 14 |
| Additional Feature | UL RECOGNIZED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 630W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| JESD-30 Code | R-PUFM-X14 |
| Number of Elements | 4 |
| Configuration | Full Bridge Inverter |
| Case Connection | ISOLATED |
| Power - Max | 630W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.2V |
| Max Collector Current | 183A |
| Current - Collector Cutoff (Max) | 300μA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 7.43nF |
| Turn On Time | 175 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 100A |
| Turn Off Time-Nom (toff) | 700 ns |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 7.43nF @ 25V |
See Relate Datesheet
