MIO1200-33E10
| Parameters | |
|---|---|
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Turn-Off Delay Time | 1.07 μs |
| Collector Emitter Voltage (VCEO) | 3.1V |
| Max Collector Current | 1.2kA |
| Current - Collector Cutoff (Max) | 120mA |
| Collector Emitter Breakdown Voltage | 3.3kV |
| Voltage - Collector Emitter Breakdown (Max) | 3300V |
| Current - Collector (Ic) (Max) | 1200A |
| Input Capacitance | 187nF |
| Factory Lead Time | 1 Week |
| Turn On Time | 600 ns |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 1200A |
| Mount | Chassis Mount |
| Turn Off Time-Nom (toff) | 1510 ns |
| Mounting Type | Chassis Mount |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 187nF @ 25V |
| RoHS Status | ROHS3 Compliant |
| Package / Case | E10 |
| Lead Free | Lead Free |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~125°C TJ |
| Published | 2011 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 9 |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Base Part Number | MIO |
| Pin Count | 9 |
| JESD-30 Code | R-XUFM-X9 |
| Number of Elements | 3 |
| Configuration | Single Switch |
| Case Connection | ISOLATED |
| Turn On Delay Time | 400 ns |
See Relate Datesheet
