Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Module |
Operating Temperature | -40°C~150°C TJ |
Packaging | Bulk |
Published | 2013 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 1.1kW |
Number of Elements | 1 |
Configuration | Single |
Power - Max | 1100W |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.1V |
Max Collector Current | 360A |
Current - Collector Cutoff (Max) | 300μA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 225A |
IGBT Type | PT |
NTC Thermistor | Yes |
Gate-Emitter Voltage-Max | 20V |
RoHS Status | ROHS3 Compliant |