Parameters | |
---|---|
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Module |
Number of Pins | 10 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Bulk |
Published | 2013 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 11 |
Additional Feature | UL RECOGNIZED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 1.5kW |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Reference Standard | IEC-60747 |
JESD-30 Code | R-XUFM-X11 |
Number of Elements | 2 |
Configuration | Half Bridge |
Power Dissipation | 1.5kW |
Case Connection | ISOLATED |
Power - Max | 1500W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.1V |
Max Collector Current | 465A |
Current - Collector Cutoff (Max) | 300μA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 1.8V |
Turn On Time | 178 ns |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 300A |
Turn Off Time-Nom (toff) | 635 ns |
IGBT Type | PT |
NTC Thermistor | Yes |
Gate-Emitter Voltage-Max | 20V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |