Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | V1A-PAK |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Bulk |
Published | 2015 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Additional Feature | UL RECOGNIZED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 390W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
JESD-30 Code | R-XUFM-X8 |
Number of Elements | 1 |
Configuration | Single |
Case Connection | ISOLATED |
Power - Max | 390W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.2V |
Max Collector Current | 120A |
Current - Collector Cutoff (Max) | 200μA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Turn On Time | 110 ns |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 77A |
Turn Off Time-Nom (toff) | 350 ns |
IGBT Type | PT |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
RoHS Status | ROHS3 Compliant |