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MIXA80W1200TED

IGBT MODULE 1200V 120A 390W E2


  • Manufacturer: IXYS
  • Nocochips NO: 401-MIXA80W1200TED
  • Package: E2
  • Datasheet: PDF
  • Stock: 737
  • Description: IGBT MODULE 1200V 120A 390W E2 (Kg)

Details

Tags

Parameters
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 120A
Current - Collector Cutoff (Max) 200μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 77A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.1 V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E2
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 390W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 28
JESD-30 Code R-XUFM-X21
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 390W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
See Relate Datesheet

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