Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-204AA, TO-3 |
Number of Pins | 2 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~200°C TJ |
Packaging | Tray |
Published | 2000 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | -100V |
Max Power Dissipation | 200W |
Terminal Position | BOTTOM |
Terminal Form | PIN/PEG |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 30A |
Frequency | 2MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 200W |
Case Connection | COLLECTOR |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 2MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 90V |
Max Collector Current | 30A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 7.5A 2V |
Current - Collector Cutoff (Max) | 1mA ICBO |
Vce Saturation (Max) @ Ib, Ic | 800mV @ 750mA, 7.5A |
Collector Emitter Breakdown Voltage | 100V |
Transition Frequency | 2MHz |
Collector Emitter Saturation Voltage | 800mV |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 4V |
hFE Min | 25 |
Height | 8.51mm |
Length | 39.37mm |
Width | 26.67mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Contact Plating | Tin |