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MJD112RLG

MJD112RLG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MJD112RLG
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 984
  • Description: MJD112RLG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD112
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A 3V
Current - Collector Cutoff (Max) 20μA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 25MHz
Collector Emitter Saturation Voltage 2V
Max Breakdown Voltage 100V
Frequency - Transition 25MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 2A
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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