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MJD112TF

MJD112TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MJD112TF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 148
  • Description: MJD112TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MJD112
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 1.75W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A 3V
Current - Collector Cutoff (Max) 20μA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 25MHz
Collector Emitter Saturation Voltage 2V
Max Breakdown Voltage 100V
Frequency - Transition 25MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Height 2.3mm
Length 6.6mm
Width 6.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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