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MJD122T4

MJD122T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MJD122T4
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 121
  • Description: MJD122T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 5A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MJD122
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 20W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 2V @ 15mA, 4A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 4MHz
Max Breakdown Voltage 100V
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 8A
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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