Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | -25V |
Max Power Dissipation | 1.4W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -5A |
Frequency | 65MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | MJD210 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1.4W |
Case Connection | COLLECTOR |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 65MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 25V |
Max Collector Current | 5A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A 1V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
Collector Emitter Breakdown Voltage | 25V |
Transition Frequency | 65MHz |
Collector Emitter Saturation Voltage | 1.8V |
Max Breakdown Voltage | 25V |
Collector Base Voltage (VCBO) | 40V |
Emitter Base Voltage (VEBO) | 8V |
hFE Min | 70 |
Height | 2.38mm |
Length | 6.73mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |