Parameters | |
---|---|
Lifecycle Status | OBSOLETE (Last Updated: 4 days ago) |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Surface Mount | NO |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2002 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Subcategory | Other Transistors |
Voltage - Rated DC | -60V |
Max Power Dissipation | 1.75W |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | -10A |
Frequency | 2MHz |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | MJD2955 |
Pin Count | 4 |
JESD-30 Code | R-PSIP-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1.75W |
Case Connection | COLLECTOR |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 2MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 60V |
Max Collector Current | 10A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A 4V |
Current - Collector Cutoff (Max) | 50μA |
Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A |
Collector Emitter Breakdown Voltage | 60V |
Transition Frequency | 2MHz |
Collector Emitter Saturation Voltage | 1.1V |
Collector Base Voltage (VCBO) | 70V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 20 |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |