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MJD44H11-1G

MJD44H11-1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MJD44H11-1G
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 949
  • Description: MJD44H11-1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 1.75W
Peak Reflow Temperature (Cel) 260
Current Rating 8A
Frequency 85MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD44H11
Pin Count 4
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.75W
Case Connection COLLECTOR
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 85MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 5V
Emitter Base Voltage (VEBO) 5V
hFE Min 60
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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