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MJD45H11T4G

MJD45H11T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MJD45H11T4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 163
  • Description: MJD45H11T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 hour ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -8A
Frequency 90MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD45H11
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.75W
Case Connection COLLECTOR
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 90MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 90MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 5V
Emitter Base Voltage (VEBO) 5V
hFE Min 60
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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