Parameters | |
---|---|
Lifecycle Status | OBSOLETE (Last Updated: 2 weeks ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Bulk |
Published | 2009 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
HTS Code | 8541.29.00.75 |
Subcategory | Other Transistors |
Voltage - Rated DC | -80V |
Max Power Dissipation | 1.5W |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | -3A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | MJE172 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power - Max | 1.5W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 50MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 1.7V |
Max Collector Current | 3A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA 1V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1.7V @ 600mA, 3A |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 50MHz |
Collector Emitter Saturation Voltage | 1.7V |
Max Breakdown Voltage | 32V |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 7V |
hFE Min | 50 |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |