Parameters | |
---|---|
Collector Emitter Saturation Voltage | 1.7V |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 7V |
hFE Min | 50 |
Collector-Base Capacitance-Max | 40pF |
Height | 11.05mm |
Length | 7.8mm |
Width | 2.9mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Number of Pins | 3 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | 100V |
Max Power Dissipation | 12.5W |
Current Rating | 3A |
Frequency | 50MHz |
Base Part Number | MJE182 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 12.5W |
Case Connection | ISOLATED |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 50MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 80V |
Max Collector Current | 3A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA 1V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1.7V @ 600mA, 3A |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 50MHz |