MJE210
| Parameters | |
|---|---|
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 65MHz |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | -8V |
| hFE Min | 45 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 1.5W |
| Current Rating | -5A |
| Frequency | 65MHz |
| Base Part Number | MJE210 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.5W |
| Case Connection | ISOLATED |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 65MHz |
See Relate Datesheet
