Parameters | |
---|---|
Lifecycle Status | OBSOLETE (Last Updated: 2 weeks ago) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Bulk |
Published | 2007 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -25V |
Max Power Dissipation | 15W |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | unknown |
Current Rating | -5A |
Frequency | 65MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | MJE210 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 15W |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 65MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 25V |
Max Collector Current | 5A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A 1V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
Collector Emitter Breakdown Voltage | 40V |
Transition Frequency | 65MHz |
Collector Emitter Saturation Voltage | 1.8V |
Collector Base Voltage (VCBO) | 40V |
Emitter Base Voltage (VEBO) | 8V |
hFE Min | 70 |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |