Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -60V |
Max Power Dissipation | 75W |
Current Rating | -10A |
Frequency | 2MHz |
Base Part Number | MJE295 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 75W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 2MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 60V |
Max Collector Current | 10A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A 4V |
Current - Collector Cutoff (Max) | 700μA |
Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A |
Collector Emitter Breakdown Voltage | 60V |
Transition Frequency | 2MHz |
Collector Emitter Saturation Voltage | 1.1V |
Collector Base Voltage (VCBO) | 70V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 20 |
VCEsat-Max | 8 V |
Height | 9.15mm |
Length | 10.4mm |
Width | 4.6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |