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MJE5851G

MJE5851G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MJE5851G
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 187
  • Description: MJE5851G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
Series SWITCHMODE™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -350V
Max Power Dissipation 80W
Peak Reflow Temperature (Cel) 260
Current Rating -8A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 80W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 5A 5V
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 5V @ 3A, 8A
Collector Emitter Breakdown Voltage 350V
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 6V
hFE Min 15
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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