MJE702
| Parameters | |
|---|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A 3V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 4A |
| Transition Frequency | 1MHz |
| RoHS Status | Non-RoHS Compliant |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Packaging | Bulk |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| Terminal Finish | TIN LEAD |
| Additional Feature | BUILT IN BIAS RESISTOR |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | 240 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Power - Max | 40W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP - Darlington |
See Relate Datesheet
