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MJE800STU

MJE800STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MJE800STU
  • Package: TO-225AA, TO-126-3
  • Datasheet: PDF
  • Stock: 509
  • Description: MJE800STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Voltage - Rated DC 60V
Max Power Dissipation 40W
Current Rating 4A
Base Part Number MJE800
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A 3V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage 2.5V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 700
Height 11mm
Length 8mm
Width 3.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
See Relate Datesheet

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