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MKI50-12F7

MOD IGBT H-BRIDGE 1200V 65A E2


  • Manufacturer: IXYS
  • Nocochips NO: 401-MKI50-12F7
  • Package: E2
  • Datasheet: PDF
  • Stock: 371
  • Description: MOD IGBT H-BRIDGE 1200V 65A E2 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E2
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 17
Additional Feature FAST SWITCHING, LOW SATURATION VOLTAGE, UL RECOGNIZED
Max Power Dissipation 350W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MKI
Pin Count 17
JESD-30 Code R-XUFM-X17
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Power - Max 350W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.8V
Max Collector Current 65A
Current - Collector Cutoff (Max) 700μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 3.3nF
Turn On Time 190 ns
Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 50A
Turn Off Time-Nom (toff) 390 ns
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 3.3nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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