Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | E1 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~125°C TJ |
Published | 2012 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 10 |
Additional Feature | UL RECOGNIZED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 210W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | MKI |
Pin Count | 24 |
JESD-30 Code | R-XUFM-X10 |
Qualification Status | Not Qualified |
Number of Elements | 4 |
Configuration | Full Bridge Inverter |
Case Connection | ISOLATED |
Power - Max | 210W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.3V |
Max Collector Current | 89A |
Current - Collector Cutoff (Max) | 500μA |
Collector Emitter Breakdown Voltage | 600V |
Input Capacitance | 4.62nF |
Turn On Time | 50 ns |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 75A |
Turn Off Time-Nom (toff) | 320 ns |
IGBT Type | Trench |
NTC Thermistor | Yes |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 4.62nF @ 25V |
RoHS Status | ROHS3 Compliant |