Parameters | |
---|---|
Lifecycle Status | OBSOLETE (Last Updated: 14 hours ago) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Number of Pins | 3 |
Packaging | Tape & Reel (TR) |
Published | 2006 |
Series | SMARTDISCRETES™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 750MOhm |
Terminal Finish | Tin (Sn) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Applications | General Purpose |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Voltage - Rated DC | 62V |
Max Power Dissipation | 40W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 1A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | MLD1N06C |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 40W |
Turn On Delay Time | 1.2 ns |
Transistor Application | SWITCHING |
Halogen Free | Halogen Free |
Rise Time | 4ns |
Drain to Source Voltage (Vdss) | 62V |
Fall Time (Typ) | 3 ns |
Transistor Type | NPN, N-Channel Gate-Drain, Source Clamp |
Turn-Off Delay Time | 4 ns |
Continuous Drain Current (ID) | 1A |
Threshold Voltage | 1.5V |
Gate to Source Voltage (Vgs) | 10V |
Drain Current-Max (Abs) (ID) | 1A |
Drain to Source Breakdown Voltage | 59V |
Avalanche Energy Rating (Eas) | 80 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Drain to Source Resistance | 750mOhm |
Nominal Vgs | 1.5 V |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |