MMBFJ112
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 11 hours ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 35V |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 5mA |
| Base Part Number | MBFJ112 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| Power Dissipation | 350mW |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Breakdown Voltage | -35V |
| Drain to Source Voltage (Vdss) | 35V |
| Continuous Drain Current (ID) | 5mA |
| Gate to Source Voltage (Vgs) | -35V |
| FET Technology | JUNCTION |
| Max Junction Temperature (Tj) | 150°C |
| Drain to Source Resistance | 50Ohm |
| Feedback Cap-Max (Crss) | 5 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id | 1V @ 1μA |
| Resistance - RDS(On) | 50Ohm |
| Height | 1.11mm |
| Length | 2.92mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
