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MMBFJ113

JFET N-CH 35V 350MW SOT23


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MMBFJ113
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 449
  • Description: JFET N-CH 35V 350MW SOT23 (Kg)

Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 35V
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 2mA
Base Part Number MBFJ113
Number of Elements 1
Number of Channels 1
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 350mW
FET Type N-Channel
Transistor Application SWITCHING
Breakdown Voltage -35V
Drain to Source Voltage (Vdss) 35V
Continuous Drain Current (ID) 2mA
Gate to Source Voltage (Vgs) -35V
FET Technology JUNCTION
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 100Ohm
Feedback Cap-Max (Crss) 5 pF
Current - Drain (Idss) @ Vds (Vgs=0) 2mA @ 15V
Voltage - Cutoff (VGS off) @ Id 500mV @ 1μA
Resistance - RDS(On) 100Ohm
Height 1.2mm
Length 2.92mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 11 hours ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
See Relate Datesheet

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