Parameters | |
---|---|
Voltage - Rated DC | 25V |
Max Power Dissipation | 225mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 20mA |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | MMBFJ211 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | DEPLETION MODE |
Power Dissipation | 225mW |
Transistor Application | AMPLIFIER |
Drain to Source Voltage (Vdss) | 25V |
Transistor Type | N-Channel JFET |
Continuous Drain Current (ID) | 20mA |
Gate to Source Voltage (Vgs) | -25V |
FET Technology | JUNCTION |
Highest Frequency Band | VERY HIGH FREQUENCY B |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 12 hours ago) |
Mount | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Weight | 30mg |
Packaging | Tape & Reel (TR) |
Published | 2008 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
HTS Code | 8541.21.00.95 |
Subcategory | Other Transistors |