Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 15 hours ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Weight | 30mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | 45V |
Max Power Dissipation | 350mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | 500mA |
Frequency | 250MHz |
Base Part Number | MMBT100 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 350mW |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 250MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 45V |
Max Collector Current | 500mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 5V |
Current - Collector Cutoff (Max) | 50nA |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 200mA |
Collector Emitter Breakdown Voltage | 45V |
Transition Frequency | 250MHz |
Collector Emitter Saturation Voltage | 400mV |
Max Breakdown Voltage | 45V |
Collector Base Voltage (VCBO) | 75V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 100 |
VCEsat-Max | 0.2 V |
Collector-Base Capacitance-Max | 4.5pF |
Height | 970μm |
Length | 2.9mm |
Width | 1.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |