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MMBT4126LT1G

MMBT4126LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MMBT4126LT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 816
  • Description: MMBT4126LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -25V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -200mA
Frequency 250MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBT4126
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Power - Max 225mW
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 1V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 25V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage -400mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 4V
hFE Min 120
Height 1.11mm
Length 3.04mm
Width 2.64mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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